advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 500v simple drive requirement r ds(on) 0.43 fast switching characteristic i d 16a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.5 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice 201022073-1/4 AP4085I rohs-compliant product parameter rating drain-source voltage 500 gate-source voltage 30 continuous drain current, v gs @ 10v 16 continuous drain current, v gs @ 10v 11 pulsed drain current 1 60 total power dissipation 40 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.31 159 16 thermal data parameter storage temperature range g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for commercial- industrial through hole applications. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 500 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =8a - - 0.43 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 3 - 5 v g fs forward transconductance v ds =10v, i d =8a - 6.3 - s i dss drain-source leakage current v ds =400v, v gs =0v - - 100 ua i gss gate-source leakage v gs =30v - - 100 na q g total gate charge 3 i d =16a - 48 77 nc q gs gate-source charge v ds =200v - 9 - nc q gd gate-drain ("miller") charge v gs =10v - 32 - nc t d(on) turn-on delay time 3 v dd =200v - 48 - ns t r rise time i d =8a - 134 - ns t d(off) turn-off delay time r g =50 ? v gs =10v - 195 - ns t f fall time r d =25 - 121 - ns c iss input capacitance v gs =0v - 1205 1930 pf c oss output capacitance v ds =30v - 255 - pf c rss reverse transfer capacitance f=1.0mhz - 50 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =16a, v gs =0v - - 1.3 v t rr reverse recovery time i s =16a, v gs =0v - 630 - ns q rr reverse recovery charge di/dt=100a/s - 13 - uc notes: 1.pulse width limited by max junction temperature. 2.starting t j =25 o c , v dd =99v , l=1mh , r g =25 3.pulse test 2/4 AP4085I this product is an electrostatic sensitive, please handle with caution. this product has been qualified for consumer market. applications or uses as criterial component in life support device or system are not authorized.
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 AP4085I 0 4 8 12 16 0.0 4.0 8.0 12.0 16.0 20.0 24.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0 v 8.0 v 7.0v v g = 6.0v 0 10 20 30 0.0 4.0 8.0 12.0 16.0 20.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 9.0 v 8.0 v 7.0v v g =6.0v 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP4085I 0 0 1 10 100 1000 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 102030405060 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =16a v ds =200v 10 100 1000 10000 1 5 9 13 17 21 25 29 33 37 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 10v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : to-220cfm millimeters min nom max a 4.50 4.70 4.90 a1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 e 9.70 10.00 10.40 l3 2.91 3.41 3.91 l4 14.70 15.40 16.10 ---- 3.20 ---- e ---- 2.54 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220cfm symbols advanced power electronics corp. package code 4085i part number logo date code (ywwsss) y last digit of the year ww week sss sequence ywwsss logo a1 a c e b b1 e l4 c2 a1 a c e b b1 e l4 c2 l3
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